6 May 1994 Momentum reorientation of photo-excited carriers in GaAs
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175897
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Momentum relaxation of photo-excited carriers in GaAs was investigated using the Monte Carlo approach. A laser of 1.51 eV photon energy and 9 fs width was assumed. Simulations were performed for excitation densities ranging from 1016 cm-3 to 8 X 1017 cm-3. For nexc equals 8 X 1017 cm-3, the distribution of the carrier momentum was found to approximate a Maxwell-Boltzmann distribution 25 fs after laser excitation, which concurs with recent experimental data. The relaxation time was shown to increase with decreasing carrier density and to be shorter when the carrier-carrier scattering was treated dynamically rather than statically.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed A. Osman, N. Nintunze, "Momentum reorientation of photo-excited carriers in GaAs", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175897; https://doi.org/10.1117/12.175897
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