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6 May 1994 Monte Carlo simulation of intersubband relaxation in single and multiple quantum wells
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175893
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
We studied intersubband relaxation of carries during ultrafast photoexcitation in single and coupled quantum wells using ensemble Monte Carlo simulation, Intra- and intersubband scattering due to polar and nonpolar optical phonons, acoustic phonons, and intercarrier scattering are included in the simulation. The polar optical mode description is given in terms of a two-pole dielectric continuum model for the alloy barriers. In the present work we focus on relaxation when the 2-1 subband spacing is smaller than the optical phonon energy so that suppression of the intersubband polar optical phonon scattering rate occurs. Our results for a single well show that intercarrier intersubband scattering dominates over acoustic phonon scattering during the initial relaxation of carriers from 2-1, with a strong contribution due to polar optical phonon emission from the tails of the heated distributions as well. We have studied optical pumping for a 3 level coupled quantum well system in which (Delta) E12 is less than h(omega) 0, and calculate the change in occupancy of the excited subbands through pumping of the 1-3 transition.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephen M. Goodnick, S. Pennathur, Paolo Lugli, and M. Gulia "Monte Carlo simulation of intersubband relaxation in single and multiple quantum wells", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175893
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