Radiative recombination and spin-relaxation dynamics of excitons in GaAs quantum wells

A. Vinattieri; Jagdeep Shah; Theodore C. Damen; Loren N. Pfeiffer; Lu Jeu Sham; M. Z. Maialle

doi:10.1117/12.175880

Translator Disclaimer

6 May 1994 Radiative recombination and spin-relaxation dynamics of excitons in GaAs quantum wells

A. Vinattieri; Jagdeep Shah; Theodore C. Damen; Loren N. Pfeiffer; Lu Jeu Sham; M. Z. Maialle

Author Affiliations +

Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175880
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We show that the initial dynamics of resonantly excited excitons in quantum wells is controlled by several processes, such as radiative recombination, spin-relaxation of excitons, electrons and holes, and scattering between different momentum states of excitons. We present results of experiments designed to simultaneously probe these processes. By a unified analysis of the results we extract quantitative information about radiative, spin-relaxation and momentum- relaxation rates, obtaining a good physical understanding of the initial dynamics of non- equilibrium excitons.

Citation Download Citation

A. Vinattieri, Jagdeep Shah, Theodore C. Damen, Loren N. Pfeiffer, Lu Jeu Sham, and M. Z. Maialle "Radiative recombination and spin-relaxation dynamics of excitons in GaAs quantum wells", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); https://doi.org/10.1117/12.175880

ACCESS THE FULL ARTICLE