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6 May 1994 Resonant tunneling in unipolar triple-barrier structures investigated by time-resolved photoluminescence
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994)
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
The electron and hole transport in a triple-barrier resonant tunneling diode are investigated using photoluminescence spectroscopy on a picosecond and nanosecond time scale. Time- resolved populations are created by exciting only the GaAs contact layers on either side of the tunneling structure but luminescence signals are detected from each of the two consisting quantum wells. Under external bias, several alignment conditions are investigated. First, the resonance of the ground state of the accumulation layer with either the narrow or the wide well depending on the bias direction. Second, the alignment of the accumulation layer with both quantum well subbands. For most external biases, the excess photocreated electron density is small with respect to the steady-state injected current density and the transient luminescence reflects the hole population. Both rise and decay of the transient photoluminescence are governed by the hole tunneling rate which increases with increasing bias. The sequential process of tunneling from the first to the second quantum well is apparent from a comparison of the signals in opposite bias direction. In the low current regime, time- resolved electron tunneling manifests, which adds a fast component to the transient luminescence signal.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris A. Van Hoof, Jan Genoe, Gustaaf Borghs, Dietrich Bertram, Herbert Lage, Wolfgang W. Ruehle, and Holger T. Grahn "Resonant tunneling in unipolar triple-barrier structures investigated by time-resolved photoluminescence", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994);

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