6 May 1994 Scaled ensemble Monte Carlo
Author Affiliations +
Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175899
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We introduce a scaled ensemble Monte Carlo technique for the simulation of semiconductor plasmas at ultrashort times after excitation. The error, from counting statistics, can be decreased directly either by a computationally expensive increase in the number of simulation trajectories or by averaging over long times. The latter approach cannot be applied in studying ultrafast, far-from-equilibrium phenomena. The remaining alternative is to redistribute the computational effort to weight more heavily those regions with low densities. Scaled EMC uses ordinary EMC weighting, but simulates a different function, related by an energy- dependent scaling factor to the usual particle distribution. The simulation trajectories obey the same free-flight equations of motion as ordinary EMC, with no `splitting' of particles or iteration of trajectories. We describe simulations of modulation-doped GaAs structures under applied fields. G-, L- and X-valley carrier populations are determined across more than seven orders of magnitude in density, using only ten thousand simulation points, with fractionally small sampling error across a one-volt energy range. Using standard EMC with the same number of points, sampling statistics necessarily limits the range of simulable densities to less than four decades overall.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alfred M. Kriman, Ravindra P. Joshi, "Scaled ensemble Monte Carlo", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175899; https://doi.org/10.1117/12.175899

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