6 May 1994 Temporal evolution of the dense electron-hole plasma phase in GaAs quantum wires
Author Affiliations +
Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175916
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We report a spectroscopic investigation of the stationary and transient recombination processes in rectangular GaAs quantum well-wires. The ground level exciton states are studied by linear and non linear photoluminescence excitation spectroscopy, providing information on the one-dimensional exciton binding energy and on the actual band gap edge of the wires. The carrier density dependence and the temporal evolution of the band gap renormalization in GaAs quantum wires have been determined by a line-shape analysis of the time resolved electron-hole plasma luminescence. The obtained data are compared with recent theoretical calculations.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roberto Cingolani, Roberto Cingolani, R. Rinaldi, R. Rinaldi, Michele Ferrara, Michele Ferrara, Giuseppe C. La Rocca, Giuseppe C. La Rocca, Herbert Lage, Herbert Lage, Detlef Heitmann, Detlef Heitmann, H. Kalt, H. Kalt, } "Temporal evolution of the dense electron-hole plasma phase in GaAs quantum wires", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175916; https://doi.org/10.1117/12.175916

Back to Top