6 May 1994 Thermionic emission and tunneling in a strained InGaAsP 1.3 um multiple quantum well laser structure
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Proceedings Volume 2142, Ultrafast Phenomena in Semiconductors; (1994) https://doi.org/10.1117/12.175902
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We have measured the time-resolved photoconductive response of a strained InGaAs/InGaAsP/InP multiple quantum well laser structure as a function of temperature and bias. It is found that the hole escape is dominated by tunneling at reverse biases of greater than -0.5 V at all temperatures. Under forward bias, recombination is dominant at temperatures below approximately 90 K while thermal escape processes prevail at higher temperatures. From Arrhenius plots of the hole escape time, the activation energy from the ground level has been determined as a function of bias and is in good agreement with a valence band offset of 75% of the total band offset. The intercepts of the plots yielded a scattering parameter of 6 ps. The carrier dynamics within the well were simulated using a simple model of thermionic emission and gave good qualitative agreement. The calculations indicate that the structures have the potential for extremely fast detection.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruce W. Takasaki, Bruce W. Takasaki, John S. Preston, John S. Preston, John D. Evans, John D. Evans, John G. Simmons, John G. Simmons, "Thermionic emission and tunneling in a strained InGaAsP 1.3 um multiple quantum well laser structure", Proc. SPIE 2142, Ultrafast Phenomena in Semiconductors, (6 May 1994); doi: 10.1117/12.175902; https://doi.org/10.1117/12.175902

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