High-speed operation of the heterostructure field effect optical modulator

Timothy A. Vang; Patrik A. Evaldsson; Philip A. Kiely; Geoffrey W. Taylor; Paul W. Cooke

doi:10.1117/12.177224

2 June 1994 High-speed operation of the heterostructure field effect optical modulator

Timothy A. Vang, Patrik A. Evaldsson, Philip A. Kiely, Geoffrey W. Taylor, Paul W. Cooke

Proceedings Volume 2144, Advanced Photonics Materials for Information Technology; (1994) https://doi.org/10.1117/12.177224
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The Heterostructure Field Effect Optical Modulator (HFEOM) is a waveguide modulator that operates via band filling of quantum wells using charge transfer from an adjacent n⁺ charge sheet. The control of this charge transfer is with a gate electrode as in a field effect transistor. The band filling of the quantum wells produces a blue-shift of the absorption edge that is used to modulate the incident light. This device is compatible in both growth and processing with the associated in- plane laser and field effect transistor. The initial high speed results of HFEOMs in the InGaAs/GaAs material system are presented using a double quantum well active region. This structure has demonstrated a 35:1 extinction ratio for a 2 volt swing (-1 V to +1 V) on a 300 micrometers long device along with excellent wavelength compatibility with a 400 micrometers in-plane laser fabricated from the same wafer. Capacitance limited modulation bandwidths of 1.2 GHz and 1.6 GHz are measured for 5 micrometers and 2 micrometers rib widths respectively.

Citation Download Citation

Timothy A. Vang, Patrik A. Evaldsson, Philip A. Kiely, Geoffrey W. Taylor, and Paul W. Cooke "High-speed operation of the heterostructure field effect optical modulator", Proc. SPIE 2144, Advanced Photonics Materials for Information Technology, (2 June 1994); https://doi.org/10.1117/12.177224

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