2 June 1994 GaAs/InGaP/AlGaAs quantum well infrared photodetectors
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Abstract
In this paper, a new quantum-well IR photodetector based on bound-to-miniband transitions in a GaAs/InGaP quantum well with GaAs/AlGaAs short superlattice barriers is presented and compared with the conventional GaAs/InGaP QWIPs. Results of the theoretical calculations of the detector parameters and the preliminary fabrication results of an embedded-well to miniband GaAs/InGaP/AlGaAs quantum well/superlattice detector are presented. The advantages of the proposed design include improvement of the material quality, ability to adjust the peak wavelength in 8 to 12 micrometers range, and in the lower dark current.
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Patamaporn Keshagupta, Farhad Radpour, "GaAs/InGaP/AlGaAs quantum well infrared photodetectors", Proc. SPIE 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, (2 June 1994); doi: 10.1117/12.177144; https://doi.org/10.1117/12.177144
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