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2 June 1994 GaInAsP/GaAs for high-power pumping laser
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Abstract
GaInAsP lattice matched to GaAs in the entire bandgap range has been grown by low-pressure metalorganic chemical vapor deposition. Small mismatch and strong interference fringes in the x-ray spectrum, sharp photoluminescence (PL) peak, and high electron mobility indicate good control of the quaternary compositions, smooth epilayer interfaces, and coherent growth of the epilayers. Temperature coefficient of bandgap is measured from the temperature dependence of the PL peak to be 4.09 XT 10-4eV/K at 300K. Anomalous temperature dependence of PL at low temperature, similar to that reported for GaInP, is reported for GaInAsP/GaAs for the first time. It questions the attribution of the uncommon behavior to the crystal defects related to the long-range ordered structure.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Manijeh Razeghi, X. G. He, Jacqueline E. Diaz, James R. Hoff, Matthew Erdtmann, and Emil I. Kolev "GaInAsP/GaAs for high-power pumping laser", Proc. SPIE 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, (2 June 1994); https://doi.org/10.1117/12.177153
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