2 June 1994 InTISb alloys for infrared detection
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Abstract
InTISb alloys have been grown by low-pressure metalorganic chemical vapor deposition, and characterized. Photoconductors exhibit a cutoff wavelength that can be tailored from 5.5 micrometers up to 9 micrometers by varying the thallium content. Experimental observations suggest that this can be further extended by increasing the thallium content. An InTISb photoconductor having a 9 micrometers cutoff wavelength exhibited a D* of 109 cm Hz1/2 W-1 at 7-micrometers operating wavelength.
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Erwan Bigan, Erwan Bigan, Yoon-Ho Choi, Yoon-Ho Choi, G. Labeyrie, G. Labeyrie, Manijeh Razeghi, Manijeh Razeghi, } "InTISb alloys for infrared detection", Proc. SPIE 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, (2 June 1994); doi: 10.1117/12.177130; https://doi.org/10.1117/12.177130
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