2 June 1994 Quantum well mid-infrared lasers based on above-barrier transitions
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Abstract
A possible laser device is designed with the use of classically free quasibound electron states. An asymmetric semiconductor electron wave Fabry-Perot interference filter is designed with an upper electron state having much stronger confinement than the lower electron state. This structure also allows for direct current pumping of the upper state and rapid depletion of the lower state under the presence of a field. Spectroscopy experiments demonstrate the existence of the upper quasibound state in a test structure. This laser filter structure, designed for infrared gain with current pumping, is combined with a special injector filter for room temperature narrow energy current injection into the upper lasing state. A stack of 54 periods of this electrically pumped structure is placed within a waveguide geometry. A laser device is fabricated by etching mesa structures from 50 to 100 micrometers wide. End cleaved facets serve as reflectors for mesas from 2 to 5 mm long. Tests are performed on these devices to determine their electrical properties and suitability for lasing.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lawrence C. West, Lawrence C. West, Charles W. Roberts, Charles W. Roberts, Jason P. Dunkel, Jason P. Dunkel, Thomas K. Gaylord, Thomas K. Gaylord, Gregory N. Henderson, Gregory N. Henderson, Emmanuel Anemogiannis, Emmanuel Anemogiannis, Elias Nikolaos Glytsis, Elias Nikolaos Glytsis, Moses T. Asom, Moses T. Asom, } "Quantum well mid-infrared lasers based on above-barrier transitions", Proc. SPIE 2145, Nonlinear Optics for High-Speed Electronics and Optical Frequency Conversion, (2 June 1994); doi: 10.1117/12.177137; https://doi.org/10.1117/12.177137
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