Many-body effects in the gain and refractive index of an active semiconductor medium

Weng W. Chow

doi:10.1117/12.178517

30 June 1994 Many-body effects in the gain and refractive index of an active semiconductor medium

Weng W. Chow

Proceedings Volume 2146, Physics and Simulation of Optoelectronic Devices II; (1994) https://doi.org/10.1117/12.178517
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

A comprehensive microscopic theory that includes bandgap renormalization, plasma screening and interband Coulomb effects is used to calculate the gain and carrier-induced refractive index in an active semiconductor medium. This paper describes the effects of these many-body interactions on bulk and quantum well structures.

Citation Download Citation

Weng W. Chow "Many-body effects in the gain and refractive index of an active semiconductor medium", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178517

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