30 June 1994 Self-consistent thermal-electrical modeling of proton-implanted top-surface emitting semiconductor lasers
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Abstract
A new comprehensive thermal-electrical self-consistent model of proton-implanted top-surface-emitting lasers is described. The model is applied to study thermal characteristics of GaAs/AlGa As/AlAs devices with the active-region diameter of 35 micrometers . Our results show that intense heating occurs at pumping currents exceeding 4X threshold. Long tails of radial temperature distribution will result in severe thermal crosstalk if integration of these devices into densely packed 2D arrays were to be attempted. Minimization of electrical series resistance is shown to be very important for improving the device performance.
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Wlodzimierz Nakwaski, Wlodzimierz Nakwaski, Marek Osinski, Marek Osinski, } "Self-consistent thermal-electrical modeling of proton-implanted top-surface emitting semiconductor lasers", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178527; https://doi.org/10.1117/12.178527
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