Semiconductor microcavity lasers

Paul Lee Gourley; Joel R. Wendt; G. Allen Vawter; Mial E. Warren; Thomas M. Brennan; B. Eugene Hammons

doi:10.1117/12.178523

30 June 1994 Semiconductor microcavity lasers

Paul Lee Gourley, Joel R. Wendt, G. Allen Vawter, Mial E. Warren, Thomas M. Brennan, B. Eugene Hammons

Proceedings Volume 2146, Physics and Simulation of Optoelectronic Devices II; (1994) https://doi.org/10.1117/12.178523
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3D architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures that have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.

Citation Download Citation

Paul Lee Gourley, Joel R. Wendt, G. Allen Vawter, Mial E. Warren, Thomas M. Brennan, and B. Eugene Hammons "Semiconductor microcavity lasers", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178523

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