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30 June 1994 Semiconductor microcavity lasers
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Abstract
New kinds of semiconductor microcavity lasers are being created by modern semiconductor technologies like molecular beam epitaxy and electron beam lithography. These new microcavities exploit 3D architectures possible with epitaxial layering and surface patterning. The physical properties of these microcavities are intimately related to the geometry imposed on the semiconductor materials. Among these microcavities are surface-emitting structures that have many useful properties for commercial purposes. This paper reviews the basic physics of these microstructured lasers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Lee Gourley, Joel R. Wendt, G. Allen Vawter, Mial E. Warren, Thomas M. Brennan, and B. Eugene Hammons "Semiconductor microcavity lasers", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178523
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