30 June 1994 Transport in the base of a resonant tunneling light-emitting transistor
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We model the electron transport in the base of the resonant tunneling light emitting transistor, which is a crucial parameter for this device since it determines the spatial distribution of the light output. It is shown that this transport is ruled by diffusion of electrons. Carrier diffusion profiles are determined in the case that the Einstein approximation is valid (a constant diffusion coefficient). In this case, the electron transport under the emitter can be exactly calculated yielding a confluent hypergeometric function as spatial distribution. Better solutions using a charge-dependent diffusion coefficient are indicated (the Stern approach both with and without a magnetic field). This charge-dependent diffusion coefficient is calculated using the quantum capacitance concept. This makes only a numerical solution for the transport equation possible.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Genoe, Jan Genoe, Chris A. Van Hoof, Chris A. Van Hoof, Kristel Fobelets, Kristel Fobelets, Gustaaf Borghs, Gustaaf Borghs, "Transport in the base of a resonant tunneling light-emitting transistor", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); doi: 10.1117/12.178502; https://doi.org/10.1117/12.178502

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