2 June 1994 Microfabrication of vertical-cavity surface-emitting laser cavities
Author Affiliations +
Proceedings Volume 2147, Vertical-Cavity Surface-Emitting Laser Arrays; (1994); doi: 10.1117/12.177202
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by using dielectric high reflectivity mirrors which were deposited after the diode fabrication step. This device fabrication sequence is able to correct for inaccuracies in the crystal growth and allows the future development of more complex laser structures. The quantum- well based laser diodes were demonstrated at 0.72 micrometers , 0.85 micrometers , and 1.55 micrometers . Threshold currents and voltages of our 0.85 micrometers lasers were 2.8 mA at 1.7 V pulsed, and 4 mA when cw- pumped. The threshold currents of 5x7 micrometers 2 area 1.55 micrometers devices were 17 mA.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Axel Scherer, Jack L. Jewell, James P. Harbison, Kazuhisa Uomi, S. J. Ben Yoo, Rajaram J. Bhat, M. Walther, "Microfabrication of vertical-cavity surface-emitting laser cavities", Proc. SPIE 2147, Vertical-Cavity Surface-Emitting Laser Arrays, (2 June 1994); doi: 10.1117/12.177202; https://doi.org/10.1117/12.177202


Vertical cavity surface emitting lasers

Dielectric mirrors

Laser damage threshold

Quantum wells

Gallium arsenide


Back to Top