Microfabrication of vertical-cavity surface-emitting laser cavities

Axel Scherer; Jack L. Jewell; James P. Harbison; Kazuhisa Uomi; S. J. Ben Yoo; Rajaram J. Bhat; M. Walther

doi:10.1117/12.177202

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2 June 1994 Microfabrication of vertical-cavity surface-emitting laser cavities

Axel Scherer, Jack L. Jewell, James P. Harbison, Kazuhisa Uomi, S. J. Ben Yoo, Rajaram J. Bhat, M. Walther

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Proceedings Volume 2147, Vertical-Cavity Surface-Emitting Laser Arrays; (1994) https://doi.org/10.1117/12.177202
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We have reduced the threshold voltages and currents of vertical cavity surface emitting lasers by using dielectric high reflectivity mirrors which were deposited after the diode fabrication step. This device fabrication sequence is able to correct for inaccuracies in the crystal growth and allows the future development of more complex laser structures. The quantum- well based laser diodes were demonstrated at 0.72 micrometers , 0.85 micrometers , and 1.55 micrometers . Threshold currents and voltages of our 0.85 micrometers lasers were 2.8 mA at 1.7 V pulsed, and 4 mA when cw- pumped. The threshold currents of 5x7 micrometers ² area 1.55 micrometers devices were 17 mA.

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Axel Scherer, Jack L. Jewell, James P. Harbison, Kazuhisa Uomi, S. J. Ben Yoo, Rajaram J. Bhat, and M. Walther "Microfabrication of vertical-cavity surface-emitting laser cavities", Proc. SPIE 2147, Vertical-Cavity Surface-Emitting Laser Arrays, (2 June 1994); https://doi.org/10.1117/12.177202

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