Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy

James J. Coleman; Timothy M. Cockerill; David V. Forbes; J. A. Dantzig

doi:10.1117/12.176610

1 June 1994 Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy

James J. Coleman, Timothy M. Cockerill, David V. Forbes, J. A. Dantzig

Author Affiliations +

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176610
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Strained-layer In_xGa_1-xAs-GaAs-Al_yGa_1-yAs buried heterostructure (BH) quantum well lasers have been fabricated using three-step selective-area atmospheric pressure metalorganic chemical vapor deposition. Selective-area epitaxy is used to produce BH lasers involving only GaAs on GaAs regrowth, eliminating the detrimental effects associated with exposed Al_yGa_1-yAs found in other fabrication methods. Additionally, selective-area epitaxy provides in-plane bandgap energy control to fabricate BH devices with different wavelengths on the same wafer.

Citation Download Citation

James J. Coleman, Timothy M. Cockerill, David V. Forbes, and J. A. Dantzig "Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176610

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