1 June 1994 Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy
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Abstract
Strained-layer InxGa1-xAs-GaAs-AlyGa1-yAs buried heterostructure (BH) quantum well lasers have been fabricated using three-step selective-area atmospheric pressure metalorganic chemical vapor deposition. Selective-area epitaxy is used to produce BH lasers involving only GaAs on GaAs regrowth, eliminating the detrimental effects associated with exposed AlyGa1-yAs found in other fabrication methods. Additionally, selective-area epitaxy provides in-plane bandgap energy control to fabricate BH devices with different wavelengths on the same wafer.
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James J. Coleman, James J. Coleman, Timothy M. Cockerill, Timothy M. Cockerill, David V. Forbes, David V. Forbes, J. A. Dantzig, J. A. Dantzig, } "Advances in quantum well heterostructure lasers: strained-layer buried heterostructure lasers by selective-area epitaxy", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176610; https://doi.org/10.1117/12.176610
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