1 June 1994 High-power and highly reliable operation of all-MOCVD-grown 1.48-um diode lasers
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Abstract
High output power and long-term stable operation have been realized in all-MOCVD grown 1.48 micrometers buried heterostructure lasers. For the purpose of high power operation, a diode with a cavity length of 1800 micrometers was mounted junction down. This diode shows the maximum output power of 310 mW at 25 degree(s)C, cw. A preliminary aging test is being carried on at a temperature of 50 degree(s)C with a constant light output of 100 mW for the diodes with cavity length of 900 micrometers and junction up configuration. Long-term stable operation over 3000 hrs and the estimated MTTF of 2.4 X 105 hrs at 50 degree(s)C, 100 mW have been realized. As another advantage of the all-MOCVD process, the uniformity of the laser characteristics is also demonstrated. Lasers with a cavity length of 900 micrometers in junction-up configuration are assembled from a processed 2-inch wafer.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tadashi Nishimura, Tadashi Nishimura, Yasuo Nakajima, Yasuo Nakajima, T. Kimura, T. Kimura, Yoshihiro Kokubo, Yoshihiro Kokubo, K. Isshiki, K. Isshiki, Etsuji Omura, Etsuji Omura, Masao Aiga, Masao Aiga, Kenji Ikeda, Kenji Ikeda, } "High-power and highly reliable operation of all-MOCVD-grown 1.48-um diode lasers", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176607; https://doi.org/10.1117/12.176607
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