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1 June 1994 Lasers for large modulation bandwidth and low-threshold applications
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Carrier transport and recombination dynamics are seen to be the intrinsic limitations to the performance of quantum well lasers. The carrier relaxation times as a function of quantum well width were measured in laser structures using a streak camera. Auger recombination rates were experimentally determined in compressively strained InxGa1-xAs/InGaAsP/InP quantum wells from the large signal modulation of single mode lasers. In order to overcome the intrinsic limitations in present semiconductor laser designs, a new device concept has been demonstrated: the tunneling injection quantum well laser, in which the carriers are injected into the active lasing subband by resonant and sequential tunneling. The highest 3 dB modulation bandwidth (12.5 GHz) and the highest differential gain (6 X 10-16 cm2) for a single quantum well laser have already been demonstrated. To realize threshold currents of much less than 1 mA, quantum wire lasers are required. We present theoretical and experimental results on the performance characteristics of quantum wire lasers. The experimental structures are being realized in the InxGa1-xAs/GaAs system by MBE growth and regrowth and electron beam lithography.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pallab Bhattacharya, L. Davis, H. C. Sun, Hosung Yoon, Sanjay Sethi, J. Shuttlewood, Igor Vurgaftman, and Jasprit Singh "Lasers for large modulation bandwidth and low-threshold applications", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994);

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