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1 June 1994 Optimization of 670-nm strained quantum well laser diodes
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There is increasing interest in the use of visible emitting (formula available in paper) quantum well lasers for optical interconnections using polymer waveguides and this calls for the optimization of device structure for operation at a specific wavelength and usually at an elevated temperature. We concentrate on the mechanisms by which compressive strain modifies the threshold current in a regime where well composition (x) (strain) and quantum well width are adjusted to maintain a transition wavelength of 670 nm. In our model we assume a parabolic band structure, which is a reasonable approximation in this case since strain enhanced splitting of the valence bands is large, and we include the effects of monolayer fluctuations in well width and carrier-carrier scattering (where we calculate an energy and carrier density dependent lifetime). Using our model we examine the relative merits of various well composition (x)/well width combinations.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter M. Smowton, Huw D. Summers, Paul C. T. Rees, and Peter Blood "Optimization of 670-nm strained quantum well laser diodes", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994);


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