1 June 1994 Recent progress with tapered-gain-region devices
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Semiconductor laser devices with tapered gain regions have recently generated much interest because they promise high output power with near-diffraction-limited spatial beam quality and good electrical to optical conversion efficiency. We report recent progress on two specific applications: a ring laser and a high- power erbium-doped fiber amplifier (EDFA). The ring laser operates unidirectionally in a single longitudinal mode with an output power of 170 mW and without a Faraday isolator. The high- power EDFA has an output power of 520 mW at 1.55 micrometers , the highest power reported to dates for an erbium-doped fiber amplifier using all semiconductor pump lasers. The common theme for both of these applications is the development of optical systems that produce high power in near-diffraction-limited collimated beams and efficient coupling into single mode optical fiber. We present an experimental procedure for quantitatively predicting the optical fiber power coupling efficiency. We have measured 64% power coupling efficiency measure fiber fact to power in the single-mode fiber, or 51% laser facet to power in the fiber, in good agreement with the predictions.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jeffrey C. Livas, Jeffrey C. Livas, Stephen R. Chinn, Stephen R. Chinn, Emily S. Kintzer, Emily S. Kintzer, James N. Walpole, James N. Walpole, Christine A. Wang, Christine A. Wang, Leo J. Missaggia, Leo J. Missaggia, } "Recent progress with tapered-gain-region devices", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176603; https://doi.org/10.1117/12.176603


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