1 June 1994 Refractory contact lasers
Author Affiliations +
Abstract
In this paper we discuss the effects of incorporating carbon doping in semiconductor lasers. Data is presented that demonstrates that very high quality carbon doped epilayers for the fabrication of AlGaAs-GaAs and AlGaAs-GaAs-InGaAs quantum well lasers can be grown by solid source molecular beam epitaxy using a resistively heated graphite filament as a p-type dopant source. Also results are presented that indicate that the use of carbon instead of beryllium improves the contact resistance for refractory ohmic contacts.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Patrik A. Evaldsson, Patrik A. Evaldsson, Geoffrey W. Taylor, Geoffrey W. Taylor, Timothy A. Vang, Timothy A. Vang, M. Mirovic, M. Mirovic, Roger J. Malik, Roger J. Malik, } "Refractory contact lasers", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); doi: 10.1117/12.176627; https://doi.org/10.1117/12.176627
PROCEEDINGS
9 PAGES


SHARE
Back to Top