2 May 1994 Er-doped silicate glass films prepared by co-sputtering for optical amplifiers
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Abstract
Er-doped glass thin films are drawing increasing attention for optical amplifiers suitable for integrated optic configuration. We have investigated deposition of highly Er-doped (mid 1019 atoms/cm3 silica films using Rf magnetron sputtering. Erbium was doped into the host material by cosputtering techniques. Deposited films (0.5 to 1.2-micrometers thick) were characterized by photoluminescence, secondary ion mass spectroscopy, and fluorescence decay measurements. We have also deposited Er-doped three component silicate glass (SiO2 + Al2O3 + MgO) films to investigate the dependence of Er3+ luminescence on the host material's composition. Optimum anneal temperature for the silicate glass films was found to be lower than that for the silica films while the Er3+ luminescence intensity was slightly higher for the silicate glass case.
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Hong Koo Kim, Hong Koo Kim, Ching-Chung Li, Ching-Chung Li, Xiao Ming Fang, Xiao Ming Fang, Gerald Nykolak, Gerald Nykolak, Philippe C. Becker, Philippe C. Becker, "Er-doped silicate glass films prepared by co-sputtering for optical amplifiers", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175265; https://doi.org/10.1117/12.175265
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