Integral Gummel relation for single- and double-heterojunction graded-base HBTs

J. S. Yuan

doi:10.1117/12.175262

2 May 1994 Integral Gummel relation for single- and double-heterojunction graded-base HBTs

J. S. Yuan

Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994) https://doi.org/10.1117/12.175262
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Integral Gummel charge-control relation for both linearly graded- and non-graded-base and for single or double-heterojunction bipolar transistors has been derived. In addition to modeling the collector current density for different heterojunction biopolar transistor with and without graded energy gap in the base. Comparisons with numerical and experimental data show excellent agreement.

Citation Download Citation

J. S. Yuan "Integral Gummel relation for single- and double-heterojunction graded-base HBTs", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175262

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