2 May 1994 Metal-semiconductor-metal photodetectors on low-temperature-grown semiconductors
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Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994); doi: 10.1117/12.175264
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
High-speed electronics was introduced into the subpicosecond regime by the applicaiton of short-pulse lasers to semiconductor systems. Photoconductive sampling, electrooptic sampling, as well as other ultrafast phenomena, have provided tools for the investigation of the behavior of solid-state materials on the ultrafast time-scale. Low-temperature-grown GaAs (LT GaAs) holds unique advantages for high-speed optoelectronics when employed with metal-semiconductor-metal photodetector (MSM) technology. To properly utilize this material we must consider its properties and the nature of the circuits and devices in which it will be used. The use of the MSM on LT GaAs as a small-signal detector and as a high-speed sampling gate has been demonstrated. Work is under way to develop materials with picosecond response and high resistivity, but with longer-wavelength sensitivity.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John A. Nees, "Metal-semiconductor-metal photodetectors on low-temperature-grown semiconductors", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175264; https://doi.org/10.1117/12.175264
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KEYWORDS
Gallium arsenide

Picosecond phenomena

Semiconductors

Indium gallium arsenide

Photodetectors

Sensors

Ultrafast phenomena

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