2 May 1994 Microscopic electric field measurement for microwave high-power FETs by using a noncontact electro-optic probing technique
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Abstract
Direct observation of nonuniform operation in GaAs microwave high-power FETs has been realized by introducing a new electro- optic (E-O) probing system. In the system, ZnTe is used as a longitudinal external E-O crystal in order to make high sensitive measurement. The spatial resolution of the E-O probing system with an electrically synchronized laser diode is as small as 5 micrometers . We apply this system to the measurement of the electric field at the microscopic region of drain electrodes of an X-band 1W FET consisting of 10 FET unit cells (73 micrometers separation). The electric field concentration to the center (1.6 times) and the most outer cells (1.1 times) has directly been measured. The electric fields on the unbalanced FET cells which were damaged artificially by the focused ion beam are also reported.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Inoue, Akira Inoue, Tomohiro Ishikawa, Tomohiro Ishikawa, S. Chaki, S. Chaki, S. Orisaka, S. Orisaka, Shin-Ichiro Aoshima, Shin-Ichiro Aoshima, Hironori Takahashi, Hironori Takahashi, } "Microscopic electric field measurement for microwave high-power FETs by using a noncontact electro-optic probing technique", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175249; https://doi.org/10.1117/12.175249
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