Picosecond characteristics of silicon-on-insulator metal-semiconductor-metal photodiodes

Chia-Chi Wang; Sotiris Alexandrou; Douglas Jacobs-Perkins; Thomas Y. Hsiang

doi:10.1117/12.175267

2 May 1994 Picosecond characteristics of silicon-on-insulator metal-semiconductor-metal photodiodes

Chia-Chi Wang, Sotiris Alexandrou, Douglas Jacobs-Perkins, Thomas Y. Hsiang

Author Affiliations +

Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994) https://doi.org/10.1117/12.175267
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

A subpicosecond electro-optic sampling system was used to measure the picosecond characteristics of silicon-based, metal- semiconductor-metal photodiodes made on both bulk-silicon and silicon-on-sapphire (SOS) substrates with submicrometer finger spacings and widths. The temporal response of bulk-silicon diodes was strongly dependent on the wavelength of excitation light because of the effect of different penetration depths. On the other hand, for the SOS diodes, the device speed is nearly independent of wavelength since the thickness of the silicon layer limits the depth of photogenerated carriers. The external quantum efficiency of SOS diodes was measured at several selected wavelengths and shown to be dominated by the photon absorption coefficient.

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Chia-Chi Wang, Sotiris Alexandrou, Douglas Jacobs-Perkins, and Thomas Y. Hsiang "Picosecond characteristics of silicon-on-insulator metal-semiconductor-metal photodiodes", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175267

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