Thermal and reverse base current effects on heterojunction bipolar transistors and circuits

J. S. Yuan

doi:10.1117/12.175253

2 May 1994 Thermal and reverse base current effects on heterojunction bipolar transistors and circuits

J. S. Yuan

Proceedings Volume 2149, Technologies for Optical Fiber Communications; (1994) https://doi.org/10.1117/12.175253
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Device modeling of the heterojunction bipolar transistor (HBT) has been examined. The Gummel-Poon model derived from silicon bipolar transistor is able to predict the base and collector currents of the HBT with good accuracy for negligible self- heating. The present model extends the Gummel-Poon model equations to account for self-heating using a nonlinear thermal resistance. The present model also accounts for base current reversal due to impact ionization in the collector-base depletion region. Effects of self-heating on the performance of analog circuits such as current mirrors and small-signal amplifiers are evaluated.

Citation Download Citation

J. S. Yuan "Thermal and reverse base current effects on heterojunction bipolar transistors and circuits", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); https://doi.org/10.1117/12.175253

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