2 May 1994 Thermal and reverse base current effects on heterojunction bipolar transistors and circuits
Author Affiliations +
Abstract
Device modeling of the heterojunction bipolar transistor (HBT) has been examined. The Gummel-Poon model derived from silicon bipolar transistor is able to predict the base and collector currents of the HBT with good accuracy for negligible self- heating. The present model extends the Gummel-Poon model equations to account for self-heating using a nonlinear thermal resistance. The present model also accounts for base current reversal due to impact ionization in the collector-base depletion region. Effects of self-heating on the performance of analog circuits such as current mirrors and small-signal amplifiers are evaluated.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. S. Yuan, "Thermal and reverse base current effects on heterojunction bipolar transistors and circuits", Proc. SPIE 2149, Technologies for Optical Fiber Communications, (2 May 1994); doi: 10.1117/12.175253; https://doi.org/10.1117/12.175253
PROCEEDINGS
11 PAGES


SHARE
Back to Top