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2 May 1994 Design of Al-free and Al-based InGaAs/GaAs strained quantum well 980-nm pump lasers including thermal behavior effects on E/O characteristics
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Abstract
A 2D thermal simulator and a model to evaluate high power lasers characteristics have been developed. With these models it was possible to optimize cavity length of InGaAs/GaAs (Multiple) Quantum Well 980 nm lasers realized both with Al-based and Al-free confining layers. A comprehensive experimental investigation of the influence of cavity length and temperature on the laser emission wavelength has been performed. This allows a fine trimming of the devices to match the Erbium doped fiber absorption bandwidth.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergio Pellegrino, M. G. Re, C. Beoni, D. Reichenbach, and F. Vidimari "Design of Al-free and Al-based InGaAs/GaAs strained quantum well 980-nm pump lasers including thermal behavior effects on E/O characteristics", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); https://doi.org/10.1117/12.175004
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