2 May 1994 Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation
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In this work we have investigated the effect of various implantation schemes on In(0.2)GaAs/GaAs/AlGaAs Single Quantum Well, where the implanted species are Argon and Helium, with doses in the range 1E12 to 1E14 at cm^2, at energy spanning 270 - 400 KeV and 30 to 50 KeV for Ar and He, respectively. Repetitive annealing processes were carried out between 735 and 870 degree(s)C and the interdiffusion was deduced by photoluminescence measurements. A maximum of 20 nm shift from He ion implanted Quantum Well with an high degree of reconstruction has been recorded, thus allowing the application of this disordering scheme for the realization of optoelectronic devices.
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Sergio Pellegrino, Sergio Pellegrino, C. Pignataro, C. Pignataro, Manuela Caldironi, Manuela Caldironi, M. Dellagiovanna, M. Dellagiovanna, F. Vidimari, F. Vidimari, Alberto Carnera, Alberto Carnera, A. Gasparotto, A. Gasparotto, "Disordering of InGaAs/GaAs strained quantum well structures induced by rare gas ion implantation", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.175013; https://doi.org/10.1117/12.175013

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