Electroluminescence from novel porous silicon p-n junction devices

Jieming Qi; D. C. Diaz; H. Guan; Biswajit Das; A. Yin; M. Dobrowolska

doi:10.1117/12.174980

2 May 1994 Electroluminescence from novel porous silicon p-n junction devices

Jieming Qi, D. C. Diaz, H. Guan, Biswajit Das, A. Yin, M. Dobrowolska

Proceedings Volume 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.174980
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The electroluminescent properties of various porous silicon pn junction devices have been investigated. Devices were fabricated by constant current anodization method as well as a novel method developed for anodizing heavily doped pn junctions. The constant current anodized devices show electroluminescence only under reverse bias condition. The light emission mechanism in these devices is believed to be similar to the hot electron relaxation mechanism observed in a surface-treated crystalline silicon pn junction diode at breakdown. The pn junctions fabricated by the novel anodization technique show electroluminescence under forward bias condition. The light emission mechanism in these devices is believed to be due to electron-hole injection in the silicon quantum wires.

Citation Download Citation

Jieming Qi, D. C. Diaz, H. Guan, Biswajit Das, A. Yin, and M. Dobrowolska "Electroluminescence from novel porous silicon p-n junction devices", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); https://doi.org/10.1117/12.174980

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