2 May 1994 Electroluminescence from novel porous silicon p-n junction devices
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Proceedings Volume 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits; (1994); doi: 10.1117/12.174980
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
The electroluminescent properties of various porous silicon pn junction devices have been investigated. Devices were fabricated by constant current anodization method as well as a novel method developed for anodizing heavily doped pn junctions. The constant current anodized devices show electroluminescence only under reverse bias condition. The light emission mechanism in these devices is believed to be similar to the hot electron relaxation mechanism observed in a surface-treated crystalline silicon pn junction diode at breakdown. The pn junctions fabricated by the novel anodization technique show electroluminescence under forward bias condition. The light emission mechanism in these devices is believed to be due to electron-hole injection in the silicon quantum wires.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jieming Qi, D. C. Diaz, H. Guan, Biswajit Das, A. Yin, M. Dobrowolska, "Electroluminescence from novel porous silicon p-n junction devices", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); doi: 10.1117/12.174980; https://doi.org/10.1117/12.174980
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KEYWORDS
Silicon

Electroluminescence

Light emitting diodes

Doping

Diodes

Fabrication

Resistance

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