Modeling of nonlinear effects in GaInAsP electroabsorption modulators

Roberto Sabella; Paolo Lugli; Duilio Meglio; Olof Sahlen

doi:10.1117/12.174982

2 May 1994 Modeling of nonlinear effects in GaInAsP electroabsorption modulators

Roberto Sabella, Paolo Lugli, Duilio Meglio, Olof Sahlen

Proceedings Volume 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.174982
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

A numerical model of bulk electroabsorption modulators has been developed. It consists of a quasi-2D representation based on a drift-diffusion approach and includes the presence of heterostructures and Fermi statistics for the carriers. The non-linear behavior of this type of device, essentially related to the pile-up and the space-charge effects, has been analyzed. Simulations results have been compared with laboratory measurements on a fabricated device that presents an abrupt heterojunction, obtaining a good agreement. Two other types of structures have been simulated, one obtained with the inclusion of a thin quaternary layer and the other with a graded heterojunction, which eliminate the hole pile-up at the InGaAsP-InP heterointerface. The paper demonstrates that it is possible to approach the optimum behavior of the modulator using both the alternatives considered here. Finally, non linear effects in short modulators has been investigated.

Citation Download Citation

Roberto Sabella, Paolo Lugli, Duilio Meglio, and Olof Sahlen "Modeling of nonlinear effects in GaInAsP electroabsorption modulators", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); https://doi.org/10.1117/12.174982

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