Relaxation mechanisms of electronic excitation in nanostructures of porous silicon

Pavel K. Kashkarov; Elizaveta A. Konstantinova; Viktor Yu. Timoshenko

doi:10.1117/12.174977

2 May 1994 Relaxation mechanisms of electronic excitation in nanostructures of porous silicon

Pavel K. Kashkarov, Elizaveta A. Konstantinova, Viktor Yu. Timoshenko

Proceedings Volume 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits; (1994) https://doi.org/10.1117/12.174977
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Results of experimental investigation of photostimulated effects in porous silicon are presented. Some conclusions about the dissipation of a nonequilibrium charge carrier energy in this material are made.

Citation Download Citation

Pavel K. Kashkarov, Elizaveta A. Konstantinova, and Viktor Yu. Timoshenko "Relaxation mechanisms of electronic excitation in nanostructures of porous silicon", Proc. SPIE 2150, Design, Simulation, and Fabrication of Optoelectronic Devices and Circuits, (2 May 1994); https://doi.org/10.1117/12.174977

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