CVD diamond film temperature sensors

Mohammad Aslam; G. S. Yang; Ashraf Masood; Ronald J. Fredricks; Mike A. Tamor; Thomas Potter

doi:10.1117/12.171759

1 April 1994 CVD diamond film temperature sensors

Mohammad Aslam, G. S. Yang, Ashraf Masood, Ronald J. Fredricks, Mike A. Tamor, Thomas Potter

Proceedings Volume 2151, Diamond-Film Semiconductors; (1994) https://doi.org/10.1117/12.171759
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Due to a unique combination of its mechanical, electrical, thermal, and chemical properties, diamond is an excellent material for temperature and heat flux sensors. Although natural diamond and synthetic diamond thermistors were demonstrated for temperatures below 600 K already in the 1960s, they were never commercialized mainly due to high cost. Recently, there has been a renewed interest in diamond thermistors because of rapid progress in diamond film fabrication using the chemical vapor deposition (CVD) process, which can produce diamond films on nondiamond substrates such as Si at a cost comparable to any other material fabricated routinely in the IC industry. Due to these developments, there is a tremendous potential of diamond temperature sensors for high-speed and high-temperature applications, especially in harsh environments. In fact, diamond sensors may be the first application of diamond in the area of passive diamond electronic devices, because sensor structures do not require single crystal diamond and n-type doping which is difficult to achieve. In the present work, we demonstrate that p- type polycrystalline diamond thermistors show temperature and response-time ranges of 80-1373 K and 290ns-25microsecond(s) , respectively. The fabrication technology of a multisensor diamond microchip is discussed for commercialization of diamond sensors in the near term.

Citation Download Citation

Mohammad Aslam, G. S. Yang, Ashraf Masood, Ronald J. Fredricks, Mike A. Tamor, and Thomas Potter "CVD diamond film temperature sensors", Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); https://doi.org/10.1117/12.171759

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