Current-voltage and capacitance-voltage characterization of MS, MiS, and MOS structures on semiconducting diamond

Michelle L. Hartsell; Henry A. Wynands; Bradley Alan Fox

doi:10.1117/12.171754

1 April 1994 Current-voltage and capacitance-voltage characterization of MS, MiS, and MOS structures on semiconducting diamond

Michelle L. Hartsell, Henry A. Wynands, Bradley Alan Fox

Author Affiliations +

Proceedings Volume 2151, Diamond-Film Semiconductors; (1994) https://doi.org/10.1117/12.171754
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The electrical characteristics of metal-semiconducting diamond (MS), metal-insulating diamond-semiconducting diamond (MiS), and metal-oxide-semiconducting diamond (MOS) structures on single- crystal semiconducting diamond have been compared. Vertical structures were fabricated with the MS diode, MiS diode, and MOS capacitor on one face of the crystals and the ohmic contacts on the opposite face. Ohmic contacts, formed by ion implantation of B, exhibited reduced contact impedance. Current-voltage and capacitance-voltage characteristics of the three structures were measured. The MS and MiS diode structures exhibited large forward bias currents, whereas the insulating SiO₂ limited the forward bias current through the MOSC structure. The MiS structure exhibited the lowest reverse bias leakage currents (<10 pA/mm²), whereas the values for the MOSC and MS structures were 1 and 2 orders of magnitude larger, respectively. For all samples the uncompensated acceptor concentration of the semiconducting diamond was 1-2 X 10¹⁶ cm^-3. These values were consistent with the secondary-ion mass spectroscopy measurements of the B concentration in similar natural type IIb diamonds.

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Michelle L. Hartsell, Henry A. Wynands, and Bradley Alan Fox "Current-voltage and capacitance-voltage characterization of MS, MiS, and MOS structures on semiconducting diamond", Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); https://doi.org/10.1117/12.171754

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