1 April 1994 Device-quality polycrystalline diamond by microwave plasma-enhanced CVD
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Proceedings Volume 2151, Diamond-Film Semiconductors; (1994) https://doi.org/10.1117/12.171757
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Crystalline diamond has some unique and extreme properties that make it an attractive semiconductor in certain electronic applications such as in high-power systems and high-temperature environments. However, since a source of low-cost single crystal diamond does not exist, its widespread use is not commercially attractive. A cheaper form of diamond is polycrystalline diamond, which has been recently routinely grown on silicon by the high- pressure microwave-source plasma deposition technique. Large- grain thick polycrystalline films have been obtained with properties approaching those of single-crystal diamond. This report describes results obtained from optical and electrical methods used in evaluating these films for use as ultraviolet radiation sensors and as a capacitor dielectric.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peter B. Kosel, Peter B. Kosel, J. Iyer, J. Iyer, S. F. Carr, S. F. Carr, Alan Garscadden, Alan Garscadden, P. N. Barnes, P. N. Barnes, R. L. C. Wu, R. L. C. Wu, } "Device-quality polycrystalline diamond by microwave plasma-enhanced CVD", Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); doi: 10.1117/12.171757; https://doi.org/10.1117/12.171757
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