1 April 1994 Highly oriented diamond films on Si: growth, characterization, and devices
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Proceedings Volume 2151, Diamond-Film Semiconductors; (1994) https://doi.org/10.1117/12.171752
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
Abstract
Highly oriented, (100) textured diamond films have been grown on single-crystal Si substrates via microwave plasma enhanced chemical vapor deposition. A multistep deposition process including bias-enhanced nucleation and textured growth was used to obtain smooth films consisting of epitaxial grains with only low-angle grain boundaries. Boron-doped layers were selectively deposited onto the surface of these oriented films and temperature-dependent Hall effect measurements indicated a 3 to 5 times improvement in hole mobility over polycrystalline films grown under similar conditions. Room temperature hole mobilities between 135 and 278 cm2/V-s were measured for the highly oriented samples as compared to 2 to 50 cm2/V-s for typical polycrystalline films. Grain size effects and a comparison between the transport properties of polycrystalline, highly oriented and homoepitaxial films will be discussed. Metal-oxide- semiconductor field-effect transistors were then fabricated on the highly oriented films and exhibited saturation and pinch-off of the channel current.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian R. Stoner, D. M. Malta, A. J. Tessmer, J. Holmes, David L. Dreifus, R. C. Glass, A. Sowers, Robert J. Nemanich, "Highly oriented diamond films on Si: growth, characterization, and devices", Proc. SPIE 2151, Diamond-Film Semiconductors, (1 April 1994); doi: 10.1117/12.171752; https://doi.org/10.1117/12.171752
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