17 June 1994 Asymmetrical profile fabrication of diffractive optical elements with the help of chalcogenide inorganic resists
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Diffractive optical elements (DOE) are widely used as important parts of various optical and integrated optics devices in variuos applications: spectroscopy, laser beam shaping, waveguides input-output elements, spatial filtering,optical disk systems, etc.16. In recent time vacuum-evaporated inorganic resists on the base of chalcogenide vitreous semiconductors (ChVS) have shown to be good registering media for DOEs fabrication48. Such media are characterized by high9 or even super high'° resolution, good optical uniformity and acceptable sensitivity in wide spectral region. The produced relief can be as positive, as well as the negative one, depending on the nature of selective etchant, the resist utilized and on the scheme of relief formation. For imaging applications among the wide range of photoinduced phenomena exhibited by ChVS most frequently are used the photodoping effect5'6'8 and photoinduced ChVS layers solubility changes4'5'7. Both effects lead to substantial changes in ChVS layers solubility rates and this makes possible the production of various relief images. It is well known that fabrication of DOEs blazed profile significantly improve the DOE's efficiency performance and enable to control the spectral region of maximal light concentration of diffraction gratings. In present work we report on the use of ChVS layers (of As-S-Se composition) for the fabrication of structures with the asymmetrical profiles for integrated and diffractive optics •with the help of direct recording ( using the sawtooth-like exposure ) or additional relief treatment.
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Alexander V. Stronski, Sergey A. Kostyukevych, Peter E. Schepeljavi, Peter F. Romanenko, Igor Iosifovitc Robur, Ivan Z. Indutnyi, "Asymmetrical profile fabrication of diffractive optical elements with the help of chalcogenide inorganic resists", Proc. SPIE 2152, Diffractive and Holographic Optics Technology, (17 June 1994); doi: 10.1117/12.178089; https://doi.org/10.1117/12.178089

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