Semiconductor lasers with dry-etched facets

Szutsun Simon Ou; Jane J. Yang; Michael Jansen

doi:10.1117/12.174505

2 May 1994 Semiconductor lasers with dry-etched facets

Szutsun Simon Ou, Jane J. Yang, Michael Jansen

Proceedings Volume 2153, Optoelectronic Interconnects II; (1994) https://doi.org/10.1117/12.174505
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Semiconductor lasers with dry etched facets are of interest for monolithic 2-D coherent applications such as optical interconnects and optoelectronic integrated circuits. This paper reports recent development on this area including high-performance 3 X 3 individually addressable InGaAs/GaAs single-mode surface emitting laser diodes, 630 nm GaInP/GaAlInP surface-emitting laser diodes, and 1.3 micrometers InGaAsP/InP surface-emitting laser diodes grown on Si substrate.

Citation Download Citation

Szutsun Simon Ou, Jane J. Yang, and Michael Jansen "Semiconductor lasers with dry-etched facets", Proc. SPIE 2153, Optoelectronic Interconnects II, (2 May 1994); https://doi.org/10.1117/12.174505

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