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10 June 1994 Optically controlled microwave oscillators fabricated using GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with transparent indium-tin-oxide (ITO) emitter contacts
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Abstract
An optical GaAs/AlGaAs heterojunction bipolar transistor technology has been developed using transparent indium-tin-oxide emitter contacts for unobstructed through-the-top optical access. Optical tuning and injection locking has been observed in 6 GHz microwave oscillators made with this device. Optical tuning ranges up to 25 MHz and locking ranges up to 2.5 MHz have been demonstrated with the optical injection of RF power at 30 dB below the oscillator power level.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul N. Freeman, Weiqi Li, Mete Karakucuk, Jack R. East, George I. Haddad, and Pallab Bhattacharya "Optically controlled microwave oscillators fabricated using GaAs/AlGaAs heterojunction bipolar transistors (HBTs) with transparent indium-tin-oxide (ITO) emitter contacts", Proc. SPIE 2155, Optoelectronic Signal Processing for Phased-Array Antennas IV, (10 June 1994); https://doi.org/10.1117/12.177409
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