4 January 1994 Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures
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Abstract
This work directly compares coplanar superconducting transmission lines and single-pole resonators patterned from YBCO to aluminum structures for use in GaAs/YBCO hybrid circuitry. A cryogenic on-wafer station was used to make s-parameter measurements of passive coplanar circuits as well as to characterize the performance of GaAs MESFETs at 80 K. Comparisons were made between measured data and theoretical results for passive YBCO and aluminum structures. The YBCO film was also measured using a parallel plate technique to determine microwave surface resistance to establish a correlation between patterned film and thin film microwave properties. Small-signal models were constructed to accurately predict the operation of 0.25 micrometers gate length GaAs MESFETs at 80 K under a variety of bias conditions. The cutoff frequency and maximum frequency of operation of the GaAs MESFETs increased by 29% and 13% respectively under a drain-source voltage of 2.0 V (Id equals 100% Idss) as the temperature was lowered from 300 K to 80 K.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jay Kruse, Ralph A. Schweinfurth, Feng Gao, Dan Scherrer, D. Barlage, Christine E. Platt, D. J. Van Harlingen, Milton Feng, "Cryogenic on-wafer microwave characterization of GaAs MESFETs and superconducting coplanar resonance and transmission lines structures", Proc. SPIE 2156, High Tc Microwave Superconductors and Applications, (4 January 1994); doi: 10.1117/12.166152; https://doi.org/10.1117/12.166152
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