Paper
10 August 1994 Characterization of MBE-grown ultrathin films in the La2-xSrxCuO4±δ system
Yvan Jaccard, Andreas Cretton, Erica J. Williams, Jean-Pierre Locquet, Erich Maechler, Christoph Gerber, Toni Schneider, Oystein Fischer, Piero Martinoli
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Abstract
Using a molecular beam epitaxy deposition technique, c-axis La2-xSrxCuO4+/- (delta ) ultrathin films have been prepared on (001) SrTiO3 substrates. Several superconductive properties such as the critical temperature Tc, the penetration depth (lambda) ab(0), the activation energy for flux flow (Delta) U and the Hall coefficient RH are reported for the same set of films. As the dopant content is increased, maximum values for Tc and (Delta) U are observed near the optimum doping while RH decreases continuously.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yvan Jaccard, Andreas Cretton, Erica J. Williams, Jean-Pierre Locquet, Erich Maechler, Christoph Gerber, Toni Schneider, Oystein Fischer, and Piero Martinoli "Characterization of MBE-grown ultrathin films in the La2-xSrxCuO4±δ system", Proc. SPIE 2158, Oxide Superconductor Physics and Nano-Engineering, (10 August 1994); https://doi.org/10.1117/12.182693
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Cited by 14 scholarly publications.
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KEYWORDS
Strontium

Inductance

Doping

Temperature metrology

Thin films

Anisotropy

Superconductors

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