10 August 1994 Fabrication and properties of field effect device based on bi-crystal grain boundary junction of YBa2Cu3O7-δ films
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Proceedings Volume 2158, Oxide Superconductor Physics and Nano-Engineering; (1994); doi: 10.1117/12.182686
Event: OE/LASE '94, 1994, Los Angeles, CA, United States
The electric field effects on bi-crystal YBa2Cu3O7-(delta ) grain boundaries were studied. The field effects were examined for an inverted MIS structure sample, in which a channel was arranged across the grain boundary on the SrTiO3 bicrystal substrate served as an insulator with the thickness of 50 micrometers . The field-induced change in the normal resistance was enhanced not only by an increase in the dielectric constant of gate insulator but also by a reduction in the carrier density nearby the grain boundary. For the sample with the YBCO thickness of 1,000 angstroms, the gate voltage of 80 V corresponding to 2 X 104 V/cm induced the relative changes in the normal resistance up to around 5%. The grain boundary junctions showed hysteretic I-V properties and sub-gap structures caused by the self-excited resonance of ac Josephson effect. Significant field effects on the hysteresis and sub-gap structures were observed. These effects were attributable to the field-induced changes in dielectric properties of the grain boundary. It was apparent that the effective dielectric constant of the grain boundary was several tens and decreased with increasing gate voltages.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kensuke Nakajima, Kazuki Yokota, Jian Chen, Hiroaki Myoren, Tsutomu Yamashita, "Fabrication and properties of field effect device based on bi-crystal grain boundary junction of YBa2Cu3O7-δ films", Proc. SPIE 2158, Oxide Superconductor Physics and Nano-Engineering, (10 August 1994); doi: 10.1117/12.182686; https://doi.org/10.1117/12.182686





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