Microanalytical study of defect formation in thin bismuth strontium calcium copper oxide films

Richard H. Howell; Alison Chaiken; Ronald G. Musket; Mark A. Wall; Mehdi Balooch; D. Phinney; Michael J. Fluss; J. N. Eckstein; Ivan Bozovic; Gary F. Virshup

doi:10.1117/12.182681

10 August 1994 Microanalytical study of defect formation in thin bismuth strontium calcium copper oxide films

Richard H. Howell; Alison Chaiken; Ronald G. Musket; Mark A. Wall; Mehdi Balooch; D. Phinney; Michael J. Fluss; J. N. Eckstein; Ivan Bozovic; Gary F. Virshup

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Proceedings Volume 2158, Oxide Superconductor Physics and Nano-Engineering; (1994) https://doi.org/10.1117/12.182681
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Thin bismuth strontium calcium copper oxide (BSCCO) films and BSCCO/insulator/BSCCO trilayers have been prepared on SrTiO₃ and MgO substrates by evaporation from elemental sources in ozone atmosphere. Accurate control of the stoichiometry is achieved through monitoring of the atomic fluxes by use of in situ atomic absorption spectroscopy, as well as by reflection high-energy electron diffraction. Nevertheless, nanometer-scale second- phase precipitates are sometimes observed. These defects and the flat regions around them have been probed by a variety of microanalytical techniques, including Rutherford backscattering spectroscopy, particle-induced x-ray emission, atomic force microscopy, microscopic secondary ion mass spectroscopy and transmission electron microscopy.

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Richard H. Howell, Richard H. Howell, Alison Chaiken, Alison Chaiken, Ronald G. Musket, Ronald G. Musket, Mark A. Wall, Mark A. Wall, Mehdi Balooch, Mehdi Balooch, D. Phinney, D. Phinney, Michael J. Fluss, Michael J. Fluss, J. N. Eckstein, J. N. Eckstein, Ivan Bozovic, Ivan Bozovic, Gary F. Virshup, Gary F. Virshup, } "Microanalytical study of defect formation in thin bismuth strontium calcium copper oxide films", Proc. SPIE 2158, Oxide Superconductor Physics and Nano-Engineering, (10 August 1994); doi: 10.1117/12.182681; https://doi.org/10.1117/12.182681

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